Package structure with structure reinforcing element and manufacturing method thereof

ABSTRACT

A package structure includes a redistribution structure, a chip, one or more structural reinforcing elements, and a protective layer. The redistribution structure includes a first circuit layer and a second circuit layer disposed over the first circuit layer. The first circuit layer is electrically connected to the second circuit layer. The chip is disposed over the redistribution structure and electrically connected to the second circuit layer. The one or more structural reinforcing elements are disposed over the redistribution structure. The structural reinforcing element has a Young&#39;s modulus in a range of of 30 to 200 GPa. The protective layer overlays the chip and a sidewall of the structural reinforcing element.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a Continuation-in-part of U.S. application Ser. No.15/590,020, filed on May 9, 2017, which issued as U.S. patent Ser. No.10/178,755 on Jan. 8, 2019. This application further claims priority toTaiwan Application Serial Number 107144592, filed Dec. 11, 2018, whichis herein incorporated by reference.

BACKGROUND Field of Invention

The present disclosure relates to a package structure, and to a methodof manufacturing a package structure.

Description of Related Art

Traditionally, a chip package structure includes a substrate, a chipover the substrate, and a package material layer overlying the chip.Since there are large differences in coefficients of thermal expansionof the substrate, chip, and package material layer, the chip packagestructure is often severely warped when forming the chip and the packagematerial layer over the substrate using a thermal process. Therefore, ayield of the chip package structure mounted on a printed circuit boardis reduced.

On the other hand, when a package structure is formed on another packagestructure to form a package-on-package (POP), the warpage phenomenonalso causes difficulty in this process.

SUMMARY

A first embodiment of the present disclosure is to provide a packagestructure, which includes a redistribution structure, a chip, one ormore structural reinforcing elements, and a protective layer. Theredistribution structure includes a first circuit layer and a secondcircuit layer disposed over the first circuit layer. The first circuitlayer is electrically connected to the second circuit layer. The chip isdisposed over the redistribution structure and electrically connected tothe second circuit layer. The one or more structural reinforcingelements are disposed over the redistribution structure. The structuralreinforcing element has a Young's modulus in a range of 30 to 200 GPa.The protective layer overlays the chip and a sidewall of the structuralreinforcing element.

According to the first embodiment of the present disclosure, the packagestructure includes one structural reinforcing element, and thestructural reinforcing element surrounds the chip.

According to the first embodiment of the present disclosure, the packagestructure includes a plurality of structural reinforcing elements, andone of the structural reinforcing elements is disposed at a first sideof the chip, and another of the structural reinforcing elements isdisposed at a second side of the chip, and the second side is oppositeor adjacent to the first side.

According to the first embodiment of the present disclosure, thestructural reinforcing element and the chip are separated by ahorizontal distance in a range of 50 to 1000 μm.

According to the first embodiment of the present disclosure, a materialof the structural reinforcing element includes, but not limited to,bismaleimide-triazine resin, epoxy resin, tin paste or copper paste.

According to the first embodiment of the present disclosure, an uppersurface of the structural reinforcing element and an upper surface ofthe protective layer are coplanar.

A second embodiment of the present disclosure is to provide a packagestructure, which includes a redistribution structure, a chip, an innerconductive reinforcing element, a first protective layer and anelectronic component. The redistribution structure includes a firstcircuit layer and a second circuit layer disposed over the first circuitlayer. The first circuit layer is electrically connected to the secondcircuit layer. The chip is disposed over the redistribution structureand electrically connected to the second circuit layer. The innerconductive reinforcing element is disposed over the redistributionstructure. The inner conductive reinforcing element includes areinforcing layer and a conductive connector. The reinforcing layer hasa Young's modulus in a range of 30 to 200 GPa, and the reinforcing layerhas a through hole. The conductive connector is disposed in the throughhole. A top portion of the conductive connector and a bottom portionthereof are exposed outside the reinforcing layer, and the bottomportion of the conductive connector is electrically connected to thesecond circuit layer. The first protective layer overlays the chip and asidewall of the inner conductive reinforcing element. The electroniccomponent is disposed over the first protective layer and electricallyconnected to the top portion of the conductive connector.

According to the second embodiment of the present disclosure, thepackage structure further includes a substrate structure and a secondprotective layer. The substrate structure is disposed between the firstprotective layer and the electronic component, and the electroniccomponent is electrically connected to the top portion of the conductiveconnector through the substrate structure. The second protective layeroverlays the electronic component.

According to the second embodiment of the present disclosure, the innerconductive reinforcing element surrounds the chip.

According to the second embodiment of the present disclosure, the innerconductive reinforcing element and the chip are separated by ahorizontal distance in a range of 50 to 1000 μm.

According to the second embodiment of the present disclosure, a materialof the reinforcing layer includes bismaleimide-triazine resin, epoxyresin, glass or ceramic.

According to the second embodiment of the present disclosure, an uppersurface of the inner conductive reinforcing element and an upper surfaceof the first protective layer are coplanar.

A third embodiment of the present disclosure is to provide a packagestructure, which includes a redistribution structure, a chip, an innerconductive reinforcing element, a protective layer and an antennapattern. The redistribution structure includes a first circuit layer anda second circuit layer disposed over the first circuit layer. The firstcircuit layer is electrically connected to the second circuit layer. Thechip is disposed over the redistribution structure and electricallyconnected to the second circuit layer. The inner conductive reinforcingelement is disposed over the redistribution structure. The innerconductive reinforcing element includes a reinforcing layer and aconductive connector. The reinforcing layer has a Young's modulus in arange of 30 to 200 GPa, and the reinforcing layer has a through hole.The conductive connector is disposed in the through hole. A top portionof the conductive connector and a bottom portion thereof are exposedoutside the reinforcing layer, and the bottom portion of the conductiveconnector is electrically connected to the second circuit layer. Theprotective layer overlays the chip and a sidewall of the innerconductive reinforcing element. The antenna pattern is disposed over theprotective layer and electrically connected to the top portion of theconductive connector.

According to the third embodiment of the present disclosure, the innerconductive reinforcing element surrounds the chip.

According to the third embodiment of the present disclosure, the innerconductive reinforcing element and the chip are separated by ahorizontal distance in a range of 50 to 1000 μm.

According to the third embodiment of the present disclosure, thereinforcing layer includes bismaleimide-triazine resin, glass orceramic.

According to the third embodiment of the present disclosure, an uppersurface of the inner conductive reinforcing element and an upper surfaceof the protective layer are coplanar.

A fourth embodiment of the present disclosure is to provide a method ofmanufacturing a package structure. The method includes: (i) providing aredistribution structure, in which the redistribution structure includesa first circuit layer and a second circuit layer disposed over the firstcircuit layer, and the first circuit layer is electrically connected tothe second circuit layer; (ii) forming one or more structuralreinforcing elements over the redistribution structure, in which thestructural reinforcing element has a Young's modulus in a range of 30 to200 GPa; (iii) disposing a chip over the redistribution structure, inwhich the chip is electrically connected to the second circuit layer;and (iv) forming a protective layer overlying the chip and thestructural reinforcing element.

According to the fourth embodiment of the present disclosure, after theoperation (iv), the method further includes: (v) removing a top portionof the protective layer to expose an upper surface of the structuralreinforcing element.

A fifth embodiment of the present disclosure is to provide a method ofmanufacturing a package structure. The method includes: (i) providing aredistribution structure, in which the redistribution structure includesa first circuit layer and a second circuit layer disposed over the firstcircuit layer, and the first circuit layer is electrically connected tothe second circuit layer; (ii) forming an inner conductive reinforcingelement over the redistribution structure, in which the inner conductivereinforcing element includes: a reinforcing layer having a Young'smodulus in a range of 30 to 200 GPa, in which the reinforcing layer hasa through hole; and a conductive connector disposed in the through hole,in which a top portion of the conductive connector and a bottom portionthereof are exposed outside the reinforcing layer, and the bottomportion of the conductive connector is electrically connected to thesecond circuit layer; (iii) disposing a chip over the redistributionstructure, in which the chip is electrically connected to the secondcircuit layer; (iv) forming a first protective layer overlying the chipand the inner conductive reinforcing element; and (v) disposing anelectronic component over the first protective layer, in which theelectronic component is electrically connected to the top portion of theconductive connector.

According to the fifth embodiment of the present disclosure, theoperation (ii) includes: (a) providing a substrate, in which thesubstrate has a Young's modulus in a range of 30 to 200 GPa; (b)performing a drilling process on the substrate to form the reinforcinglayer having the through hole; (c) forming the conductive connector inthe through hole to form the inner conductive reinforcing element; and(d) disposing the inner conductive reinforcing element over theredistribution structure.

According to the fifth embodiment of the present disclosure, in theoperation (v), the electronic component is disposed over a substratestructure and is overlaid by a second protective layer, and theelectronic component is electrically connected to the top portion of theconductive connector through the substrate structure.

A sixth embodiment of the present disclosure is to provide a method ofmanufacturing a package structure. The method includes: (i) providing aredistribution structure, in which the redistribution structure includesa first circuit layer and a second circuit layer disposed over the firstcircuit layer, and the first circuit layer is electrically connected tothe second circuit layer; (ii) forming an inner conductive reinforcingelement over the redistribution structure, in which the inner conductivereinforcing element includes: a reinforcing layer having a Young'smodulus in a range of 30 to 200 GPa, in which the reinforcing layer hasa through hole; and a conductive connector disposed in the through hole,in which a top portion of the conductive connector and a bottom portionthereof are exposed outside the reinforcing layer, and the bottomportion of the conductive connector is electrically connected to thesecond circuit layer; (iii) disposing a chip over the redistributionstructure, in which the chip is electrically connected to the secondcircuit layer; (iv) forming a protective layer overlying the chip andthe inner conductive reinforcing element; and (v) forming an antennapattern over the protective layer, in which the antenna pattern iselectrically connected to the top portion of the conductive connector.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosure will be better understood from the following detaileddescription when read in the claims. It should be emphasized that,depending over the standard practice in the industry, the features arenot drawn to scale and are for illustrative purposes only. In fact, thesize of the feature can be arbitrarily increased or decreased for thepurpose of clarity.

FIG. 1A is a cross-sectional view of a package structure according to afirst embodiment of the present disclosure;

FIG. 1B is a top view of a package structure according to an embodimentof the present disclosure;

FIG. 1C is a top view of a package structure according to an embodimentof the present disclosure;

FIG. 1D is a top view of a package structure according to an embodimentof the present disclosure;

FIG. 1E is a top view of a package structure according to an embodimentof the present disclosure;

FIG. 2 is a cross-sectional view of a package structure according to asecond embodiment of the present disclosure;

FIG. 3 is a cross-sectional view of a package structure according to athird embodiment of the present disclosure;

FIGS. 4 to 11 are cross-sectional views of various stages of a method ofmanufacturing a package structure according to the first embodiment ofthe present disclosure;

FIGS. 12 to 17 are cross-sectional views of various stages of a methodof manufacturing a package structure according to the second embodimentof the present disclosure;

FIG. 18 is a cross-sectional view of a stage of a method ofmanufacturing a package structure according to a third embodiment of thepresent disclosure; and

FIGS. 19 to 22 are cross-sectional views of various stages of a methodof manufacturing an inner conductive reinforcing element according to anembodiment of the present disclosure.

DETAILED DESCRIPTION

In order that the present disclosure is described in detail andcompleteness, implementation aspects and specific embodiments of thepresent disclosure with illustrative description are presented; but itis not the only form for implementation or use of the specificembodiments. The embodiments disclosed herein may be combined orsubstituted with each other in an advantageous manner, and otherembodiments may be added to an embodiment without further description.In the following description, numerous specific details will bedescribed in detail in order to enable the reader to fully understandthe following embodiments. However, the embodiments of the presentdisclosure may be practiced without these specific details.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“over,” “on,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The true meaningof the spatially relative terms includes other orientations. Forexample, when the figure is flipped up and down by 180 degrees, therelationship between one component and another component may change from“beneath,” “below,” “lower,” to “over,” “on,” “upper.” In addition, thespatially relative descriptions used herein should be interpreted thesame.

Please refer to FIG. 1A. FIG. 1A is a cross-sectional view of a packagestructure 10 according to a first embodiment of the present disclosure.The package structure 10 includes a redistribution structure 100, a chip200, one or more structural reinforcing elements 300, a protective layer400, and solder balls 500.

The redistribution structure 100 includes a first redistribution layer110, a second redistribution layer 120, a third redistribution layer130, and a conductive pad 140. Specifically, the first redistributionlayer 110 includes a first circuit layer 111, a first insulating layer112, and a first conductive contact 113. In some embodiments, the firstcircuit layer 111 and the first conductive contact 113 include anyconductive material, such as a metal such as copper, nickel or silver.In some embodiments, the first circuit layer 111 has a line width and aline spacing of less than 8 μm, such as 7 μm, 6 μm, 5 μm, 4 μm, 3 μm, 2μm, 1 μm, or 0.5 μm. The first insulating layer 112 covers the firstcircuit layer 111, and the first insulating layer 112 has a via hole 112a. In some embodiments, the first insulating layer 112 includes aphotosensitive dielectric material. The via hole 112 a exposes a portionof the first circuit layer 111, and the first conductive contact 113 isconformally formed in the via hole 112 a, so that the first conductivecontact 113 is in contact with the first circuit layer 111.

The second redistribution layer 120 is disposed over the firstredistribution layer 110. Specifically, the second redistribution layer120 includes a second circuit layer 121, a second insulating layer 122,and a second conductive contact 123. The second circuit layer 121 is incontact with the first conductive contact 113 such that the secondcircuit layer 121 is electrically connected to the first circuit layer111. In some embodiments, the second circuit layer 121 and the secondconductive contact 123 include any conductive material such as a metalsuch as copper, nickel or silver. In some embodiments, the secondcircuit layer 121 has a line width and a line spacing of less than 8 μm,such as 7 μm, 6 μm, 5 μm, 4 μm, 3 μm, 2 μm, 1 μm, or 0.5 μm. The secondinsulating layer 122 covers the second circuit layer 121, and the secondinsulating layer 122 has a via hole 122 a. In some embodiments, thesecond insulating layer 122 includes a photosensitive dielectricmaterial. The via hole 122 a exposes a portion of the second circuitlayer 121, and the second conductive contact 123 is conformally formedin the via hole 122 a, so that the second conductive contact 123 is incontact with the second circuit layer 121.

The third redistribution layer 130 is disposed over the secondredistribution layer 120. Specifically, the third redistribution layer130 includes a third circuit layer 131, a third insulating layer 132,and a third conductive contact 133. The third circuit layer 131 is incontact with the second conductive contact 123 such that the thirdcircuit layer 131 is electrically connected to the second circuit layer121. In some embodiments, the third circuit layer 131 and the thirdconductive contact 133 include any electrically conductive material,such as a metal such as copper, nickel or silver. In some embodiments,the third circuit layer 131 has a line width and a line spacing of lessthan 8 μm, such as 7 μm, 6 μm, 5 μm, 4 μm, 3 μm, 2 μm, 1 μm, or 0.5 μm.The third insulating layer 132 covers the third circuit layer 131, andthe third insulating layer 132 has a via hole 132 a. In someembodiments, the third insulating layer 132 includes a photosensitivedielectric material. The via hole 132 a exposes a portion of the thirdcircuit layer 131, and the third conductive contact 133 is filled in thevia hole 132 a, so that the third conductive contact 133 is in contactwith the third circuit layer 131.

The conductive pad 140 is in contact with the third conductive contact133 such that the conductive pad 140 is electrically connected to thethird circuit layer 131. In some embodiments, the conductive pad 140includes any conductive material, such as a metal such as copper,nickel, or silver.

The chip 200 is disposed over the redistribution structure 100 andelectrically connected to the third circuit layer 131. Specifically,there are a plurality of metal bumps 210 (e.g., chip pins) disposed on alower surface of the chip 200, and the metal bumps 210 are bonded to theconductive pads 140 through a solder material, so that the chip 200 iselectrically connected to the third circuit layer 131.

The one or more structural reinforcing elements 300 are disposed overthe redistribution structure 100. Specifically, the structuralreinforcing element 300 is bonded to the third redistribution layer 130using a bonding material 310. In some embodiments, the bonding material310 includes silicone adhesive, epoxy resin adhesive, polyimide (PI)adhesive or polyethylene terephthalate (PET) adhesive, but not limitedthereto. It should be understood that the structural reinforcing element300 has a Young's modulus in a range of 30 to 200 GPa, such as 100, 150or 200 GPa. As mentioned previously, the conventional chip packagestructures often suffer from severe warpage due to the thermal process.In particular, when a size of the chip package structure reaches acertain range or more, the warpage phenomenon is significantly serious,for example, when a length of the chip package structure is 15 mm ormore and a width thereof is 15 mm or more. However, the packagestructure 10 of the present disclosure is less prone to warpage by thearrangement of the structural reinforcing element 300.

Specifically, the Young's modulus of the structural reinforcing element300 is in a range of 30 to 200 GPa, thus providing the package structure10 with a sufficient mechanical strength. Accordingly, even if there isa large difference between coefficients of thermal expansion ofmaterials of elements of the package structure 10, warpage is lesslikely to occur. In some embodiments, the structural reinforcing element300 includes, but is not limited to, bismaleimide-tirazine (BT) resin,epoxy, tin paste, or copper paste. Preferably, in some embodiments, thestructural reinforcing element 300 and the chip 200 are separated by ahorizontal distance D1 in a range of 50 to 1000 μm.

For a clearer understanding of the relationship between the chip 200 andthe structural reinforcing element 300, please refer to FIG. 1B. FIG. 1Bis a top view of a package structure 10 according to an embodiment ofthe present disclosure. As shown in FIG. 1B, the package structure 10includes a structural reinforcing element 300, and the structuralreinforcing element 300 surrounds the chip 200. Specifically, thestructural reinforcing element 300 has a hollow square-shaped contour intop view.

In another embodiment, the package structure 10 includes a plurality ofstructural reinforcing elements 300, as shown in FIG. 1C. FIG. 1C is atop view of a package structure 10 according to an embodiment of thepresent disclosure. The plurality of structural reinforcing elements 300are disposed around the chip 200. Specifically, the structuralreinforcing elements 300 are disposed on four sides of the chip 200.

Alternatively, a plurality of structural reinforcing elements 300 may bedisposed on two sides of the chip 200, please refer to FIGS. 1D and 1E.As shown in FIG. 1D, the plurality of structural reinforcing elements300 are disposed on a first side 200 a and a second side 200 b of thechip 200, and the first side 200 a is opposite to the second side 200 b.Alternatively, as shown in FIG. 1E, a plurality of structuralreinforcing elements 300 are disposed on a first side 200 a and a thirdside 200 c of the chip 200, and the first side 200 a is adjacent to thethird side 200 c.

Returning to FIG. 1A, the protective layer 400 overlays the chip 200 anda sidewall of the structural reinforcing element 300 and fills the gapbetween the chip 200 and the third redistribution layer 130.Specifically, an upper surface of the structural reinforcing element 300and an upper surface of the protective layer 400 are coplanar. Theprotective layer 400 can protect the bonding between the metal bumps 210of the chip 200 and the conductive pads 140, thereby preventingoccurrence of peeling. On the other hand, the protective layer 400 canalso block moisture and avoid oxidation of the metal bumps 210, thesolder material, and the conductive pads 140. In some embodiments, theprotective layer 400 includes a resin.

The solder balls 500 are disposed beneath the redistribution structure100. Specifically, the solder balls 500 are in contact with the firstcircuit layer 111 such that the solder balls 500 are electricallyconnected to the first circuit layer 111. In some embodiments, thesolder ball 500 includes lead, tin, silver, copper, bismuth, antimony,zinc, or the like, but not limited thereto.

Please refer to FIG. 2, which is a cross-sectional view of a packagestructure 10 a according to a second embodiment of the presentdisclosure. The package structure 10 a includes a redistributionstructure 100, a chip 200, an inner conductive reinforcing element 600,a first protective layer 410, an electronic component 700, and a solderball 500. The details of the redistribution structure 100, the chip 200,and the solder ball 500 are referred to FIG. 1A and the correspondingrelated paragraphs, and are not described herein.

The inner conductive reinforcing element 600 is disposed over theredistribution structure 100, and the inner conductive reinforcingelement 600 includes a reinforcing layer 610 and a conductive connector620. In some embodiments, the conductive connector 620 includes anyelectrically conductive material, such as a metal such as copper,nickel, or silver. Specifically, the reinforcing layer 610 has a throughhole 610 a, and the conductive connector 620 is disposed in the throughhole 610 a. More specifically, a top portion of the conductive connector620 and a bottom portion thereof are exposed outside the reinforcinglayer 610, and the bottom portion of the conductive connector 620 is incontact with the conductive pad 140, so that the conductive connector620 is electrically connected to the third circuit layer 131.

It should be understood that the reinforcing layer 610 has a Young'smodulus in a range of 30 to 200 GPa, thus providing the packagestructure 10 a with a sufficient mechanical strength. In someembodiments, the reinforcing layer 610 includes, but is not limited to,bismaleimide-triazine resin, epoxy, glass, or ceramic. Preferably, insome embodiments, the inner conductive reinforcing element 600 and thechip 200 are separated by a horizontal distance D1 in a range of 50 to1000 μm.

The relationship between the chip 200 and the inner conductivereinforcing element 600 may correspond to the relationship between thechip 200 and the structural reinforcing element 300 in FIG. 1B. That is,the inner conductive reinforcing element 600 surrounds the chip 200.

The first protective layer 410 overlays the chip 200 and a sidewall ofthe inner conductive reinforcing element 600 and fills a gap between thechip 200 and the third redistribution layer 130. Specifically, an uppersurface of the inner conductive reinforcing element 600 and an uppersurface of the first protective layer 410 are coplanar. The firstprotective layer 410 can protect the bonding between the metal bumps 210of the chip 200 and the conductive pads 140, thereby preventingoccurrence of peeling. On the other hand, the first protective layer 410can also block moisture and avoid oxidation of the metal bumps 210, thesolder material, and the conductive pads 140. In some embodiments, thefirst protective layer 410 includes a resin.

The electronic component 700 is disposed over the first protective layer410 and electrically connected to the top portion of the conductiveconnector 620. Specifically, the electronic component 700 is disposedover a substrate structure 800 and is overlaid by a second protectivelayer 420. The substrate structure 800 has a first conductive pad 810, asecond conductive pad 820 and an inner circuit, and the inner circuit iselectrically connected to the first conductive pad 810 and the secondconductive pad 820. As shown in FIG. 2, the electronic component 700 iselectrically connected to the first conductive pads 810 through wires700 c. In addition, the second conductive pad 820 is electricallyconnected to the top portion of the conductive connector 620 through thesolder material 510. In some embodiments, the solder material 510includes lead, tin, silver, copper, bismuth, antimony, zinc, or thelike, but is not limited thereto.

The second protective layer 420 can block moisture and avoid oxidationof the wires 700 c and the first conductive pads 810. In someembodiments, the second protective layer 420 includes a resin. In someembodiments, the electronic component 700 is a memory.

Please refer to FIG. 3, which is a cross-sectional view of a packagestructure 10 b according to a third embodiment of the presentdisclosure. It is noted that in the third embodiment, the same orsimilar elements as those in the second embodiment are given the samereference numerals, and the related description is omitted. The packagestructure 10 b of FIG. 3 is similar to the package structure 10 a ofFIG. 2, and the difference therebetween is that the package structure 10b of FIG. 3 does not have the electronic component 700, the substratestructure 800, and the second protective layer 420. Instead, the packagestructure 10 b further includes an antenna pattern 900. The antennapattern 900 is disposed over the first protective layer 410 and incontact with the top portion of the conductive connector 620 toelectrically connect the conductive connector 620.

The present disclosure also provides a method of manufacturing a packagestructure. FIGS. 4 to 11 are cross-sectional views of various stages ofa method of manufacturing a package structure 10 according to the firstembodiment of the present disclosure.

As shown in FIG. 4, a first circuit layer 111 is formed over a substrateS. For example, a conductive material is formed over the substrate S,and the conductive material is patterned to form the first circuit layer111. In some embodiments, the manner of forming the conductive materialincludes electroplating, chemical vapor deposition, physical vapordeposition, and the like, but is not limited thereto.

Next, as shown in FIG. 5, a first insulating layer 112 is formedcovering the first circuit layer 111, and the first insulating layer 112includes a via hole 112 a exposing a portion of the first circuit layer111. For example, a dielectric material is formed over the first circuitlayer 111, and the dielectric material is patterned to form the via hole112 a. In some embodiments, the manner of forming the dielectricmaterial includes, but is not limited to, chemical vapor deposition,physical vapor deposition, and the like. In some embodiments, a methodof patterning the conductive material and the dielectric materialincludes depositing a photoresist over a layer to be patterned, andperforming exposure and development to form a patterned photoresistlayer. Next, the patterned photoresist layer is used as an etch mask foretching the layer to be patterned. Finally, the patterned photoresistlayer is removed. Alternatively, in embodiments that the dielectricmaterial is a photosensitive dielectric material, a patterning processis accomplished by removing a portion of the photosensitive dielectricmaterial using exposure and development.

Next, a second circuit layer 121 is formed over the first insulatinglayer 112, and a first conductive contact 113 is conformally formed inthe via hole 112 a. For example, a conductive material is formed overthe first insulating layer 112 and is conformally formed in the via hole112 a. Next, the conductive material is patterned to form the secondcircuit layer 121 and the first conductive contact 113.

Next, as shown in FIG. 6, a second insulating layer 122 is formedcovering the second circuit layer 121, and the second insulating layer122 includes a via hole 122 a exposing a portion of the second circuitlayer 121. For example, a dielectric material is formed over the secondcircuit layer 121, and the dielectric material is patterned to form thevia hole 122 a.

Next, a third circuit layer 131 is formed over the second insulatinglayer 122, and a second conductive contact 123 is conformally formed inthe via hole 122 a. For example, a conductive material is formed overthe second insulating layer 122 and is conformally formed in the viahole 122 a. Next, the conductive material is patterned to form the thirdcircuit layer 131 and the second conductive contact 123.

Next, as shown in FIG. 7, a third insulating layer 132 is formedcovering the third circuit layer 131, and the third insulating layer 132includes a via hole 132 a exposing a portion of the third circuit layer131. For example, a dielectric material is formed over the third circuitlayer 131, and the dielectric material is patterned to form the via hole132 a.

Next, a conductive pad 140 is formed over the third insulating layer132, and a third conductive contact 133 is formed in the via hole 132 a.For example, a conductive material is formed over the third insulatinglayer 132 and is formed in the via hole 132 a. Next, the conductivematerial is patterned to form the conductive pad 140 and the thirdconductive contact 133. Thereby, a redistribution structure 100 isformed over the substrate S.

Next, as shown in FIG. 8, one or more structural reinforcing elements300 are formed over the redistribution structure 100. For example, thestructural reinforcing element 300 is attached to the thirdredistribution layer 130 using a bonding material 310.

Next, as shown in FIG. 9, a chip 200 is disposed over the redistributionstructure 100. For example, a plurality of metal bumps 210 (e.g., chippins) on a lower surface of the chip 200 are bonded to the conductivepads 140 using a solder material.

Next, as shown in FIG. 10, a protective layer 400″ is formed overlyingthe chip 200 and the structural reinforcing element 300 and is filled ina gap between the chip 200 and the third redistribution layer 130.

Next, a top portion of the protective layer 400″ is removed using achemical mechanical polishing (CMP) process to form a protective layer400 exposing an upper surface of the structural reinforcing element 300,as shown in FIG. 11. It should be noted that removing the top portion ofthe protective layer 400″ provides a specific technical effect.Specifically, there is a large difference between the coefficient ofthermal expansion of the material of the protective layer 400″ and thoseof other elements, and thus the excessively thick protective layer 400″tends to cause warpage of the package structure. The warpage of thepackage structure can be improved by removing the top portion of theprotective layer 400″.

Next, the substrate S is peeled off to expose the first circuit layer111. Subsequently, solder balls 500 in contact with the first circuitlayer 111 are formed, thereby forming the package structure 10 as shownin FIG. 1A.

FIGS. 12 to 17 are cross-sectional views of various stages of a methodof manufacturing a package structure 10 a according to the secondembodiment of the present disclosure. FIG. 12 is continued from FIG. 6,and a third insulating layer 132 is formed covering the third circuitlayer 131, and the third insulating layer 132 includes a via hole 132 aexposing a portion of the third circuit layer 131. For example, adielectric material is formed over the third circuit layer 131, and thedielectric material is patterned to form the via hole 132 a.

Next, a conductive pad 140 is formed over the third insulating layer132, and a third conductive contact 133 is formed in the via hole 132 a.For example, a conductive material is formed over the third insulatinglayer 132 and is formed in the via hole 132 a. Next, the conductivematerial is patterned to form the conductive pad 140 and the thirdconductive contact 133. Thereby, a redistribution structure 100 isformed over the substrate S.

Next, as shown in FIG. 13, an inner conductive reinforcing element 600is formed over the redistribution structure 100. For example, aconductive connector 620 of the inner conductive reinforcing element 600is bonded to the conductive pad 140 using a bonding process. It is worthmentioning that the conductive pad 140 has a recess (as shown in FIG.12) to provide a specific technical effect. Specifically, when bondingthe conductive connector 620 with the conductive pad 140, a bottomportion of the conductive connector 620 may press an inclined surface ofthe recess of the conductive pad 140, thereby generating a drivingforce, so that a diffusion rate of copper atoms of the conductiveconnector 620 and the conductive pad 140 (when both the conductiveconnector 620 and the conductive pad 140 are made of copper) can beeffectively increased. Therefore, temperature and pressure required forthe bonding process of the conductive connector 620 and the conductivepad 140 can be effectively reduced. At the same time, the overallstructural stability can be effectively increased because it does notneed to withstand high temperature and high pressure. With regard toadvantages of the conductive pad 140 having the recess, such as reducingthe temperature and pressure required for the bonding process, as wellas improving the structural stability, etc., those may be referred toU.S. patent application Ser. No. 15/590,020 (all are incorporated hereinby reference) and are not be described here.

A method of manufacturing an inner conductive reinforcing element 600 isalso provided herein. Referring to FIGS. 19 to 22, FIGS. 19 to 22 arecross-sectional views of various stages of a method of manufacturing aninner conductive reinforcing element 600 according to an embodiment ofthe present disclosure. As shown in FIG. 19, a substrate 613 is firstlyprovided, in which the substrate 613 has a Young's modulus in a range of30 to 200 GPa. Next, as shown in FIG. 20, a drilling process isperformed to form a substrate 612 having a through hole 612 a. Next, anelectroplating process is performed to form a conductive connector 620in the through hole 612 a, as shown in FIG. 21. Subsequently, a removalprocess (e.g., etching) is performed to remove a portion of substrate612 located in a region R1 to form the inner conductive reinforcingelement 600, as shown in FIG. 22. The region R1 is the position wherethe chip 200 is disposed during a subsequent operation.

Next, as shown in FIG. 14, a chip 200 is disposed over theredistribution structure 100. For example, a plurality of metal bumps210 (e.g., chip pins) on a lower surface of the chip 200 are bonded tothe conductive pads 140 using a solder material.

Next, as shown in FIG. 15, a protective layer 400″ is formed overlyingthe chip 200 and the inner conductive reinforcing element 600, and isfilled in a gap between the chip 200 and the third redistribution layer130.

Next, a top portion of the protective layer 400″ is removed using achemical mechanical polishing process to form a first protective layer410 exposing an upper surface of the inner conductive reinforcingelement 600 as shown in FIG. 16. As described above, the warpage of thepackage structure can be improved by removing the top portion of theprotective layer 400″.

Next, as shown in FIG. 17, an electronic component 700 is disposed overthe first protective layer 410, and the electronic component 700 iselectrically connected to the top portion of the conductive connector620. Specifically, a second conductive pad 820 is bonded to the topportion of the conductive connector 620 using a solder material 510. Theelectronic component 700 is electrically connected to the firstconductive pad 810 through a wire 700 c, and the first conductive pad810 is electrically connected to the second conductive pad 820 throughan inner circuit. Therefore, the electronic component 700 iselectrically connected to the top portion of the conductive connector620.

Next, the substrate S is peeled off to expose the first circuit layer111. Subsequently, solder balls 500 in contact with the first circuitlayer 111 are formed, thereby forming the package structure 10 a asshown in FIG. 2.

FIG. 18 is a cross-sectional view of a stage of a method ofmanufacturing a package structure 10 b according to a third embodimentof the present disclosure. FIG. 18 is continued from FIG. 16, and anantenna pattern 900 is formed over the first protective layer 410 suchthat the antenna pattern is in contact with and electrically connectsthe top portion of the conductive connector 620.

Next, the substrate S is peeled off to expose the first circuit layer111. Subsequently, solder balls 500 in contact with the first circuitlayer 111 are formed, thereby forming the package structure 10 b asshown in FIG. 3.

It can be seen from the above embodiments of the present disclosure thatthe package structure disclosed herein has a sufficient mechanicalstrength. Therefore, even if there is a large difference betweencoefficients of thermal expansion of materials of elements of thepackage structure, the warpage is less likely to occur. In addition,since the package structure is less prone to warpage, it is suitable todirectly form a flat antenna pattern over the package structure.Alternatively, another package structure is disposed over the packagestructure to form a package-on-package.

While the present disclosure has been disclosed above in theembodiments, other embodiments are possible. Therefore, the spirit andscope of the claims are not limited to the description contained in theembodiments herein.

It is apparent to those skilled in the art that various alternations andmodifications may be made without departing from the spirit and scope ofthe present disclosure, and the scope of the present disclosure isdefined by the scope of the appended claims.

What is claimed is:
 1. A package structure, comprising: a redistributionstructure comprising a first circuit layer and a second circuit layerdisposed over the first circuit layer, wherein the first circuit layeris electrically connected to the second circuit layer; a chip disposedover the redistribution structure and electrically connected to thesecond circuit layer; one or more structural reinforcing elementsdisposed over the redistribution structure, wherein the structuralreinforcing element has a Young's modulus of 30 to 200 GPa; and aprotective layer overlying an upper surface and sidewalls of the chipand sidewalls of the one or more structural reinforcing elements,wherein an upper surface of the one or more structrual reinforcingelements and an upper surface of the protective layer are coplanar andhigher than the upper surface of the chip.
 2. The package structure ofclaim 1, wherein the package structure comprises one structuralreinforcing element, and the structural reinforcing element surroundsthe chip.
 3. The package structure of claim 1, wherein the packagestructure comprises a plurality of structural reinforcing elements, andone of the structural reinforcing elements is disposed at a first sideof the chip, and another of the structural reinforcing elements isdisposed at a second side of the chip, and the second side is oppositeor adjacent to the first side.
 4. The package structure of claim 1,wherein the structural reinforcing element and the chip are separated bya horizontal distance in a range of 50 to 1000 μm.
 5. The packagestructure of claim 1, wherein a material of the structural reinforcingelement comprises bismaleimide-triazine resin, epoxy resin, tin paste orcopper paste.
 6. A method of manufacturing a package structure,comprising: (i) providing a redistribution structure, wherein theredistribution structure comprises a first circuit layer and a secondcircuit layer disposed over the first circuit layer, and the firstcircuit layer is electrically connected to the second circuit layer;(ii) forming one or more structural reinforcing elements over theredistribution structure, wherein the structural reinforcing element hasa Young's modulus in a range of 30 to 200 GPa; (iii) disposing a chipover the redistribution structure, wherein the chip is electricallyconnected to the second circuit layer; and (iv) forming a protectivelayer overlying an upper surface and sidewalls of the chip and sidewallsof the one or more structural reinforcing elements, wherein an uppersurface of the one or more structural reinforcing elements and an uppersurface of the protective layer are coplanar and higher than the uppersurface of the chip.
 7. The method of manufacturing the packagestructure of claim 6, after the operation (iv), further comprising: (v)removing a top portion of the protective layer to expose an uppersurface of the structural reinforcing element.
 8. The package structureof claim 1, wherein a material of the structural reinforcing elementcomprises bismaleimide-triazine resin, tin paste or copper paste.